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MBR30030CTR - Silicon Power Schottky Diode

Download the MBR30030CTR datasheet PDF. This datasheet also covers the MBR30020CT variant, as both devices belong to the same silicon power schottky diode family and are provided as variant models within a single manufacturer datasheet.

Features

  • High Surge Capability.
  • Types from 20 V to 40 V VRRM.
  • Not ESD Sensitive MBR30020CT thru MBR30040CTR VRRM = 20 V - 40 V IF(AV) = 300 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR30020CT(R) MBR30030CT(R) MBR30035CT(R) MBR30040CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBR30020CT-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MBR30030CTR
Manufacturer GeneSiC
File Size 457.05 KB
Description Silicon Power Schottky Diode
Datasheet download datasheet MBR30030CTR Datasheet

Full PDF Text Transcription

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Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive MBR30020CT thru MBR30040CTR VRRM = 20 V - 40 V IF(AV) = 300 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR30020CT(R) MBR30030CT(R) MBR30035CT(R) MBR30040CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 20 14 20 -55 to 150 -55 to 150 30 21 30 -55 to 150 -55 to 150 35 25 35 -55 to 150 -55 to 150 40 28 40 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MBR30020CT(R) MBR30030CT(R) MBR30035
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