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MBR20035CT - Silicon Power Schottky Diode

Download the MBR20035CT datasheet PDF. This datasheet also covers the MBR20020CT variant, as both devices belong to the same silicon power schottky diode family and are provided as variant models within a single manufacturer datasheet.

Features

  • High Surge Capability.
  • Types from 20 to 40 V VRRM.
  • Not ESD Sensitive MBR20020CT thru MBR20040CTR VRRM = 20 V - 40 V IF(AV) = 200 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR20020CT(R) MBR20030CT(R) MBR20035CT(R) MBR20040CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj T.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBR20020CT-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MBR20035CT
Manufacturer GeneSiC
File Size 536.17 KB
Description Silicon Power Schottky Diode
Datasheet download datasheet MBR20035CT Datasheet

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Other Datasheets by GeneSiC

Part Number Description
MBR20035CTR Silicon Power Schottky Diode
MBR20030CT Silicon Power Schottky Diode
MBR20030CTR Silicon Power Schottky Diode
MBR20020CT Silicon Power Schottky Diode
MBR20020CTR Silicon Power Schottky Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 to 40 V VRRM • Not ESD Sensitive MBR20020CT thru MBR20040CTR VRRM = 20 V - 40 V IF(AV) = 200 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR20020CT(R) MBR20030CT(R) MBR20035CT(R) MBR20040CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 20 14 20 -55 to 150 -55 to 150 30 21 30 -55 to 150 -55 to 150 35 25 35 -55 to 150 -55 to 150 40 28 40 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MBR20020CT(R) MBR20030CT(R) MBR20035CT