The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Silicon Power Schottky Diode
Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive
MBR12020CT thru MBR12040CTR
VRRM = 20 V - 40 V IF(AV) = 120 A
Twin Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBR12020CT(R) MBR12030CT(R) MBR12035CT(R) MBR12040CT(R) Unit
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature
VRRM
VRMS VDC Tj Tstg
20
14 20 -55 to 150 -55 to 150
30
21 30 -55 to 150 -55 to 150
35
25 35 -55 to 150 -55 to 150
40
28 40 -55 to 150 -55 to 150
V
V V °C °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBR12020CT(R) MBR12030CT(R) MBR12035
MBR12020CT Datasheet
