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GA50SICP12-227 Datasheet, GeneSiC

GA50SICP12-227 co-pack equivalent, silicon carbide junction transistor/schottky diode co-pack.

GA50SICP12-227 Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 240.80KB)

GA50SICP12-227 Datasheet

Features and benefits


* 175 °C maximum operating temperature
* Temperature independent switching performance
* Gate oxide free SiC switch
* Integrated SiC Schottky Rectifier

Application


* Down Hole Oil Drilling, Geothermal Instrumentation
* Hybrid Electric Vehicles (HEV)
* Solar Inverters
.

Image gallery

GA50SICP12-227 Page 1 GA50SICP12-227 Page 2 GA50SICP12-227 Page 3

TAGS

GA50SICP12-227
Silicon
Carbide
Junction
Transistor
Schottky
Diode
Co-pack
GeneSiC

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