GA20SICP12-263 diode equivalent, silicon carbide junction transistor/schottky diode.
* 175 °C maximum operating temperature
* Temperature independent switching performance
* Gate oxide free SiC switch
* Integrated SiC Schottky Rectifier
* Down Hole Oil Drilling, Geothermal Instrumentation
* Hybrid Electric Vehicles (HEV)
* Solar Inverters
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