GA05JT12-263 transistor equivalent, junction transistor.
Package
VDS RDS(ON) ID
= 1200 V = 260 mΩ = 5A
* 175 °C maximum operating temperature
* Temperature independent switching performance
* Gate oxide free SiC.
* SiC transistor most compatible with existing Si gate-drivers
* Low switching losses
* Higher efficiency <.
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