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FST10045 - Silicon Power Schottky Diode

Key Features

  • High Surge Capability.
  • Types from 45 V to 100V VRRM.
  • Isolated to Plate.
  • Not ESD Sensitive FST10045 thru FST100100 VRRM = 45 V - 100 V IF(AV) = 100 A TO-249AB Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions FST10045 Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 45 32 45 -55 to 150 -55 to 150 FST10060 60 42 60 -55 to.

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Datasheet Details

Part number FST10045
Manufacturer GeneSiC
File Size 602.38 KB
Description Silicon Power Schottky Diode
Datasheet download datasheet FST10045 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Power Schottky Diode Features • High Surge Capability • Types from 45 V to 100V VRRM • Isolated to Plate • Not ESD Sensitive FST10045 thru FST100100 VRRM = 45 V - 100 V IF(AV) = 100 A TO-249AB Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions FST10045 Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 45 32 45 -55 to 150 -55 to 150 FST10060 60 42 60 -55 to 150 -55 to 150 FST10080 FST100100 80 57 80 -55 to 150 -55 to 150 100 70 100 -55 to 150 -55 to 150 Unit V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions FST10045 Average forward current (per pkg) Peak forward surge current