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1N6096R - Silicon Power Schottky Diode

Download the 1N6096R datasheet PDF. This datasheet also covers the 1N6095 variant, as both devices belong to the same silicon power schottky diode family and are provided as variant models within a single manufacturer datasheet.

Features

  • High Surge Capability.
  • Types from 30 V to 40V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N6095 thru 1N6096R VRRM = 30 V - 40 V IF = 25 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N6095 (R) 1N6096 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forw.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1N6095-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 1N6096R
Manufacturer GeneSiC
File Size 0.99 MB
Description Silicon Power Schottky Diode
Datasheet download datasheet 1N6096R Datasheet

📁 Similar Datasheet

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1N6096 Schottky Diode TRANSYS Electronics Limited
1N6096 (1N6095 - 1N6096R) Schottky Power Diode Naina Semiconductor

Other Datasheets by GeneSiC

Part Number Description
1N6096 Silicon Power Schottky Diode
1N6095 Silicon Power Schottky Diode
1N6095R Silicon Power Schottky Diode
1N6097 Silicon Power Schottky Diode
1N6097R Silicon Power Schottky Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Power Schottky Diode Features • High Surge Capability • Types from 30 V to 40V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N6095 thru 1N6096R VRRM = 30 V - 40 V IF = 25 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N6095 (R) 1N6096 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 100 °C TC = 25 °C, tp = 8.
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