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1N4592 - Silicon Standard Recovery Diode

Download the 1N4592 datasheet PDF. This datasheet also covers the 1N4588 variant, as both devices belong to the same silicon standard recovery diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Surge Capability.
  • Types from 200 V to 800 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N4588(R) thru 1N4593(R) VRRM = 200 V - 800 V IF =150 A DO-8 Package AC CA Stud Stud (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N4588(R) 1N4590(R) 1N4592(R) 1N4593(R) Unit Repetitive peak reverse voltage DC.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1N4588-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 1N4592
Manufacturer GeneSiC
File Size 1.71 MB
Description Silicon Standard Recovery Diode
Datasheet download datasheet 1N4592 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Standard Recovery Diode Features • High Surge Capability • Types from 200 V to 800 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N4588(R) thru 1N4593(R) VRRM = 200 V - 800 V IF =150 A DO-8 Package AC CA Stud Stud (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N4588(R) 1N4590(R) 1N4592(R) 1N4593(R) Unit Repetitive peak reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave I2t for fusing Operating temperature Storage temperature VRRM VDC IF IF,SM I2t Tj Tstg TC ≤ 110 °C TC = 25 °C, tp = 8.