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1N3671AR - Silicon Standard Recovery Diode

Download the 1N3671AR datasheet PDF. This datasheet also covers the 1N3671A variant, as both devices belong to the same silicon standard recovery diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Surge Capability.
  • Types from 800 V to 1000 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3671A thru 1N3673AR VRRM = 800 V - 1000 V IF = 12 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current,.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1N3671A-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 1N3671AR
Manufacturer GeneSiC
File Size 776.04 KB
Description Silicon Standard Recovery Diode
Datasheet download datasheet 1N3671AR Datasheet

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Other Datasheets by GeneSiC

Part Number Description
1N3671A Silicon Standard Recovery Diode
1N3673A Silicon Standard Recovery Diode
1N3673AR Silicon Standard Recovery Diode
1N3208 Silicon Standard Recovery Diode
1N3208R Silicon Standard Recovery Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Standard Recovery Diode Features • High Surge Capability • Types from 800 V to 1000 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3671A thru 1N3673AR VRRM = 800 V - 1000 V IF = 12 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 150 °C TC = 25 °C, tp = 8.