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1N1190R - Silicon Standard Recovery Diode

Download the 1N1190R datasheet PDF. This datasheet also covers the 1N1188 variant, as both devices belong to the same silicon standard recovery diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Surge Capability.
  • Types from 400 to 600 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N1188 thru 1N1190R VRRM = 400 V - 600 V IF = 35 A AC DO-5 Package CA Stud Stud (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N1188 (R) 1N1189 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocki.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1N1188-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 1N1190R
Manufacturer GeneSiC
File Size 763.25 KB
Description Silicon Standard Recovery Diode
Datasheet download datasheet 1N1190R Datasheet

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Other Datasheets by GeneSiC

Part Number Description
1N1190 Silicon Standard Recovery Diode
1N1190A Silicon Standard Recovery Diode
1N1190AR Silicon Standard Recovery Diode
1N1199A Silicon Standard Recovery Diode
1N1199AR Silicon Standard Recovery Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Standard Recovery Diode Features • High Surge Capability • Types from 400 to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N1188 thru 1N1190R VRRM = 400 V - 600 V IF = 35 A AC DO-5 Package CA Stud Stud (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N1188 (R) 1N1189 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 140 °C TC = 25 °C, tp = 8.