GE5N20V mosfet equivalent, n-channel mosfet.
RDS(ON) < 36mΩ @ VGS=2.7V RDS(ON) < 27.5mΩ @ VGS=4.5V
* High Power and current handing capability
* Lead free product is acquired
* Surface Mount Package
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* Battery protection
* Load switch
* Power management TSSOP-8 top view
PACKAGE MARKING AND ORDERING INFORMA.
The GE5N20V uses advanced trench technology to provide excellent RDS(ON), rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. This device is suitable for use as a Battery protection.
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