Datasheet Details
| Part number | GV3407 |
|---|---|
| Manufacturer | Gem micro |
| File Size | 250.25 KB |
| Description | P-Channel MOSFET |
| Datasheet |
 GV3407 Datasheet
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Key Features
- Super high dense cell trench design for low RDS(on).
- Rugged and reliable.
- SOT-23-3L package.
- Ordering information：GV3407（Lead（Pb）-free） GV3407-G（Lead（Pb）-free and halogen-free） 3 GV3407 Pin Assignment & Symbol 3-Lead Plastic SOT-23-3L Pin 1: Gate 2: Source 3: Drain Gate 1 2 Drain Source Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol VDS VGS ID IDM PD Tj, Tstg RJA RJL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current @TA=25oC1,6 D.