GWS7301E Overview
The GWS7301E is a dual low threshold gate protected MOFET designed for the small battery, cell phone, and PDA markets. Using ultra high density MOSFET process and space saving small outline Jlead package, performance normally found in a TSSOP8 footprint has been squeezed into the footprint of a TSOP6 package.
GWS7301E Key Features
- 6.5A, 20V rDS(ON) = 18mΩ typ. at 4.5 Volts
- 5.5A, 20V rDS(ON) = 25mΩ typ. at 2.5 Volts
- Excellent thermal characteristics
- Rated for High Electrical Overstress Performance of 15A short circuit and over current
- Integrated gate diodes provide Electro-Static Discharge (ESD) protection of 2500V HBM