Datasheet Details
| Part number | GWS7301E |
|---|---|
| Manufacturer | GWS |
| File Size | 391.34 KB |
| Description | Dual 20V N-Channel Power MOSFET |
| Datasheet |
 GWS7301E Datasheet
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General Description
The GWS7301E is a dual low threshold gate protected MOFET designed for the small battery, cell phone, and PDA markets.
Key Features
- 6.5A, 20V rDS(ON) = 18mΩ typ. at 4.5 Volts.
- 5.5A, 20V rDS(ON) = 25mΩ typ. at 2.5 Volts.
- Excellent thermal characteristics.
- Rated for High Electrical Overstress Performance of 15A short circuit and over current.
- Integrated gate diodes provide Electro-Static Discharge (ESD) protection of 2500V HBM. Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted) Parameter Symbol 10 secs VDS Drain-Source Voltage VGS Gate-Source Voltage o T.