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GLA2N70 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The GLA2N70 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

Dynamic dv/dt Rating Simple Drive Requirement Repetitive Avalanche Rated Fast Switching

Key Features

  • Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.70 6.30 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@5V Continuous Drain Current, VGS@5V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 2 Ratings 675 30 0.2 0.13 0.5 1.13 0.01 0.5 1 0.5.

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Datasheet Details

Part number GLA2N70
Manufacturer GTM CORPORATION
File Size 326.90 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GLA2N70 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Pb Free Plating Product ISSUED DATE :2005/09/14 www.DataSheet4U.com REVISED DATE : G L A2 N 7 0 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 675V 10 0.2A Description The GLA2N70 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. *Dynamic dv/dt Rating *Simple Drive Requirement *Repetitive Avalanche Rated *Fast Switching Features Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.70 6.30 3.30 3.70 3.30 3.70 1.40 1.