GSB1386 datasheet, transistor equivalent, GTM

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Features and benefits

*Low VCE(sat). VCE(sat) = -0.35V(Typ.) (IC/IB = -4A / -0.1A). *Excellent DC current gain characteristics. *Complements the GSD2098/GSD2118/GSD2097. Package Dimensions RE.

Application

or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or applic.

Description

The GSB1386 is a epitaxial planar type PNP silicon transistor . Features *Low VCE(sat). VCE(sat) = -0.35V(Typ.) (IC/IB = -4A / -0.1A). *Excellent DC current gain characteristics. *Complements the GSD2098/GSD2118/GSD2097. Package Dimensions REF. A M.

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