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GS123 - NPN EPITAXIAL TRANSISTOR

General Description

The GS123 is designed for general purpose amplifier applications.

REF.

Millimeter Min.

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Datasheet Details

Part number GS123
Manufacturer GTM
File Size 181.18 KB
Description NPN EPITAXIAL TRANSISTOR
Datasheet download datasheet GS123 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com ISSUED DATE :2005/02/25 REVISED DATE : GS123 Description Package Dimensions NPN EPITAXIAL TRANSISTOR The GS123 is designed for general purpose amplifier applications. REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 25 20 5 700 225 V V V mA mW Unit Characteristics Symbol BVCBO BVCEO BVEBO ICBO VCE(sat) VBE(on) hFE fT Cob at Ta = 25 Min.