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GLBCP56 - NPN EPITAXIAL SILICON TRANSISTOR

Datasheet Summary

Features

  • N P N S I L I C O N E P I TA X I A L T R A N S I S T O R The GLBCP56 is designed for use in audio amplifiers and medium power amplifications. Collector-Emitter Voltage: VCEO=80V Complementary to GLBCX53 Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13° TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Te.

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Datasheet Details

Part number GLBCP56
Manufacturer GTM
File Size 205.63 KB
Description NPN EPITAXIAL SILICON TRANSISTOR
Datasheet download datasheet GLBCP56 Datasheet
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ISSUED DATE :2002/11/20 REVISED DATE :2006/01/02D GLBCP56 Description Features N P N S I L I C O N E P I TA X I A L T R A N S I S T O R The GLBCP56 is designed for use in audio amplifiers and medium power amplifications. Collector-Emitter Voltage: VCEO=80V Complementary to GLBCX53 Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13° TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Range Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current(DC) Total Power Dissipation Symbol Ratings http://www.DataSheet4U.
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