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GL2306A - N-channel Power MOSFET

Description

The GL2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The GL2306A is universally used for all commercial-industrial surface mount applications.

Features

  • Capable of 2.5V gate drive.
  • Lower on-resistance Package Dimensions SOT-223 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@4.5V Continuous Drain Current3, VGS@4.5V Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25к ID @TA=70к IDM PD @TA=25к Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Symbol Rthj-a REF. A.

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Datasheet Details

Part number GL2306A
Manufacturer GTM
File Size 239.53 KB
Description N-channel Power MOSFET
Datasheet download datasheet GL2306A Datasheet

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Full PDF Text Transcription

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Pb Free Plating Product ISSUED DATE :2006/01/20 REVISED DATE :2006/05/03B GL2306A N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 40m 5A Description The GL2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The GL2306A is universally used for all commercial-industrial surface mount applications. Features *Capable of 2.5V gate drive *Lower on-resistance Package Dimensions SOT-223 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@4.5V Continuous Drain Current3, VGS@4.
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