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G152B - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Key Features

  • Low On-State Resistance:0.3 (max) Ultra High Speed Switching Notebook PCs Cellular and portable phones On-board power supplies Li-ion battery System.

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Datasheet Details

Part number G152B
Manufacturer GTM
File Size 496.37 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet G152B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/01/26 REVISED DATE :2005/03/22B G152B P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 0.3 -0.7A The G152B provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The G152B is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Description Features Low On-State Resistance:0.3 (max) Ultra High Speed Switching Notebook PCs Cellular and portable phones On-board power supplies Li-ion battery System Applications Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.