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GS8662R08E - 72Mb SigmaDDR-II Burst of 4 SRAM

Key Features

  • Simultaneous Read and Write SigmaDDR-II™ Interface.
  • Common I/O bus.
  • JEDEC-standard pinout and package.
  • Double Data Rate interface.
  • Byte Write (x36 and x18) and Nybble Write (x8) function.
  • Burst of 4 Read and Write.
  • 1.8 V +100/.
  • 100 mV core power supply.
  • 1.5 V or 1.8 V HSTL Interface.
  • Pipelined read operation with self-timed Late Write.
  • Fully coherent read and write pipelines.
  • ZQ pin for pro.

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Datasheet Details

Part number GS8662R08E
Manufacturer GSI Technology
File Size 1.01 MB
Description 72Mb SigmaDDR-II Burst of 4 SRAM
Datasheet download datasheet GS8662R08E Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Not Recommended for New Design—Discontinued Product GS8662R08/09/18/36E-250/200/167 165-Bump BGA Commercial Temp Industrial Temp 72Mb SigmaDDR-II™ Burst of 4 SRAM 250 MHz–167 MHz 1.8 V VDD 1.8 V and 1.5 V I/O Features • Simultaneous Read and Write SigmaDDR-II™ Interface • Common I/O bus • JEDEC-standard pinout and package • Double Data Rate interface • Byte Write (x36 and x18) and Nybble Write (x8) function • Burst of 4 Read and Write • 1.8 V +100/–100 mV core power supply • 1.5 V or 1.8 V HSTL Interface • Pipelined read operation with self-timed Late Write • Fully coherent read and write pipelines • ZQ pin for programmable output drive strength • IEEE 1149.