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GS8321V18/32/36E-250/225/200/166/150/133
165-Bump FP-BGA Commercial Temp Industrial Temp
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
250 MHz–133 MHz 1.8 V VDD 1.8 V I/O
Features
• IEEE 1149.1 JTAG-compatible Boundary Scan • 1.8 V +10%/–10% core power supply • 1.8 V I/O supply • LBO pin for Linear or Interleaved Burst mode • Internal input resistors on mode pins allow floating mode pins • Byte Write (BW) and/or Global Write (GW) operation • Internal self-timed write cycle • Automatic power-down for portable applications • JEDEC-standard 165-bump FP-BGA package • Pb-Free 165-bump BGA package available
Functional Description
Applications The GS8321V18/32/36E is a 37,748,736-bit high performance synchronous SRAM with a 2-bit burst address counter.
GS8321V18E Datasheet
