Description
Applications
The GS8160V18/32/36AT is an 18,874,368-bit (16,777,216-bit for x32 version) high performance synchronous SRAM with a 2-bit burst address counter.Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.Byte Write and Global Write
Byte write operation is performed by using Byte Write enable (BW) input combined
Features
- 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
350 MHz.
- 150 MHz 1.8 V VDD 1.8 V I/O.
- FT pin for user-configurable flow through or pipeline operation.
- Single Cycle Deselect (SCD) operation.
- 1.8 V +10%/.
- 10% core power supply.
- 1.8 V I/O supply.
- LBO pin for Linear or Interleaved Burst mode.
- Internal input resistors on mode pins allow floating mode pins.
- Default to Interleaved Pipeline mode.
- Byte Write (BW).