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GS81314PT18GK Datasheet 144mb Sigmaddr-ive Burst Of 2 Multi-bank Eccram

Manufacturer: GSI Technology

Overview: GS81314PT18/36GK-133/120/106 260-Pin BGA Com & Ind Temp POD I/O 144Mb SigmaDDR-IVe™ Burst of 2 Multi-Bank ECCRAM™ Up to 1333 MHz 1.25V ~ 1.3V VDD 1.2V ~ 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • 4Mb x 36 and 8Mb x 18 organizations available.
  • Organized as 16 logical memory banks.
  • 1333 MHz maximum operating frequency.
  • 1.333 BT/s peak transaction rate (in billions per second).
  • 96 Gb/s peak data bandwidth (in x36 devices).
  • Common I/O DDR Data Bus.
  • Non-multiplexed SDR Address Bus.
  • One operation - Read or Write - per clock cycle.
  • Certain address/bank restrictions on Read and Write ops.
  • Burst of 2 Read a.

More Datasheets from GSI Technology

Part Number Description
GS81314PT36GK 144Mb SigmaDDR-IVe Burst of 2 Multi-Bank ECCRAM
GS81314PD18GK 144Mb SigmaQuad-IVe Burst of 4 Multi-Bank ECCRAM
GS81314PD19GK 144Mb SigmaQuad-IVe Burst of 4 Single-Bank ECCRAM
GS81314PD36GK 144Mb SigmaQuad-IVe Burst of 4 Multi-Bank ECCRAM
GS81314PD37GK 144Mb SigmaQuad-IVe Burst of 4 Single-Bank ECCRAM
GS81314PQ18GK 144Mb SigmaQuad-IVe Burst of 2 Multi-Bank ECCRAM
GS81314PQ36GK 144Mb SigmaQuad-IVe Burst of 2 Multi-Bank ECCRAM
GS81314LD19GK 144Mb SigmaQuad-IVe Burst of 4 Single-Bank ECCRAM
GS81314LD37GK 144Mb SigmaQuad-IVe Burst of 4 Single-Bank ECCRAM
GS81314LQ18GK 144Mb SigmaQuad-IVe Burst of 2 Multi-Bank ECCRAM

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