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GS81302TT38E Datasheet

Manufacturer: GSI Technology

This datasheet includes multiple variants, all published together in a single manufacturer document.

GS81302TT38E datasheet preview

Datasheet Details

Part number GS81302TT38E
Datasheet GS81302TT38E GS81302TT06E-500 Datasheet (PDF)
File Size 227.52 KB
Manufacturer GSI Technology
Description 144Mb SigmaDDR-II+ Burst of 2 SRAM
GS81302TT38E page 2 GS81302TT38E page 3

GS81302TT38E Overview

GS81302TT06/11/20/38E-500/450/400/350 165-Bump BGA mercial Temp Industrial Temp 144Mb SigmaDDRTM-II+ Burst of 2 SRAM 500 MHz 350 MHz 1.8 V VDD 1.8 V or 1.5.

GS81302TT38E Key Features

  • 2.5 Clock Latency
  • Simultaneous Read and Write SigmaDDRTM Interface
  • JEDEC-standard pinout and package
  • Double Data Rate interface
  • Byte Write controls sampled at data-in time
  • Burst of 2 Read and Write
  • Dual-Range On-Die Termination (ODT) on Data (D), Byte
  • 1.8 V +100/-100 mV core power supply
  • 1.5 V or 1.8 V HSTL Interface
  • Pipelined read operation
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GS81302TT38GE 144Mb SigmaDDR-II+ Burst of 2 SRAM
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GS81302TT06E 144Mb SigmaDDR-II+ Burst of 2 SRAM
GS81302TT06GE 144Mb SigmaDDR-II+ Burst of 2 SRAM
GS81302TT07E 144Mb SigmaDDR-II+ Burst of 2 SRAM
GS81302TT07GE 144Mb SigmaDDR-II+ Burst of 2 SRAM
GS81302TT107E 144Mb SigmaDDR-II+ Burst of 2 SRAM
GS81302TT10E 144Mb SigmaDDR-II+ Burst of 2 SRAM
GS81302TT10GE 144Mb SigmaDDR-II+ Burst of 2 SRAM

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