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GS81302TT10E Datasheet 144mb Sigmaddr-ii+ Burst Of 2 Sram

Manufacturer: GSI Technology

Overview: GS81302TT07/10/19/37E-450/400/350/333/300 165-Bump BGA mercial Temp Industrial Temp 144Mb SigmaDDRTM-II+ Burst of 2 SRAM 450 MHz–300 MHz 1.8 V VDD 1.8 V or 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • 2.0 Clock Latency.
  • Simultaneous Read and Write SigmaDDR™ Interface.
  • Common I/O bus.
  • JEDEC-standard pinout and package.
  • Double Data Rate interface.
  • Byte Write controls sampled at data-in time.
  • Burst of 2 Read and Write.
  • Dual-Range On-Die Termination (ODT) on Data (D), Byte Write (BW), and Clock (K, K) inputs.
  • 1.8 V +100/.
  • 100 mV core power supply.
  • 1.5 V or 1.8 V HSTL Interface.
  • Pipelined rea.

More Datasheets from GSI Technology

Part Number Description
GS81302TT107E 144Mb SigmaDDR-II+ Burst of 2 SRAM
GS81302TT10GE 144Mb SigmaDDR-II+ Burst of 2 SRAM
GS81302TT110E 144Mb SigmaDDR-II+ Burst of 2 SRAM
GS81302TT11E 144Mb SigmaDDR-II+ Burst of 2 SRAM
GS81302TT11GE 144Mb SigmaDDR-II+ Burst of 2 SRAM
GS81302TT19E 144Mb SigmaDDR-II+ Burst of 2 SRAM
GS81302TT19GE 144Mb SigmaDDR-II+ Burst of 2 SRAM
GS81302TT06E 144Mb SigmaDDR-II+ Burst of 2 SRAM
GS81302TT06GE 144Mb SigmaDDR-II+ Burst of 2 SRAM
GS81302TT07E 144Mb SigmaDDR-II+ Burst of 2 SRAM

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