GS81302TT10E - 144Mb SigmaDDR-II+ Burst of 2 SRAM

Product Overview

GSI Technology

Datasheet Details

Part number	GS81302TT10E
Manufacturer	GSI Technology
File Size	216.17 KB
Description	144Mb SigmaDDR-II+ Burst of 2 SRAM
Datasheet	GS81302TT10E Datasheet
Note	This datasheet PDF includes multiple part numbers: GS81302TT10E, GS81302TT107E-450. Please refer to the document for exact specifications by model.
Additional preview pages of the GS81302TT10E datasheet.

Product details

Description

Table Symbol Description Type Comments SA Synchronous Address Inputs Input R/W Synchronous Read Input High: Read Low: Write BW0 BW3 Synchronous Byte Writes Input Active Low LD Synchronous Load Pin Input Active Low K Input Clock Input Active High K Input Clock

Features

2.0 Clock Latency.
Simultaneous Read and Write SigmaDDR™ Interface.
Common I/O bus.
JEDEC-standard pinout and package.
Double Data Rate interface.
Byte Write controls sampled at data-in time.
Burst of 2 Read and Write.
Dual-Range On-Die Termination (ODT) on Data (D), Byte Write (BW), and Clock (K, K) inputs.
1.8 V +100/.
100 mV core power supply.
1.5 V or 1.8 V HSTL Interface.
Pipelined rea.

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Published: Oct 13, 2016 |