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GS78116B - 512K x 16 8Mb Asynchronous SRAM

Datasheet Summary

Description

Symbol A0 to A18 DQ1 to DQ16 CE WE OE VDD VSS NC 10, 12, 15 ns 3.3 V VDD Description Address input Data input/output Chip enable input Write enable input Output enable input +3.3 V power supply Ground No connect Description The GS78116 is a high speed CMOS static RAM organized as 524,288-words b

Features

  • Fast access time: 10, 12, 15 ns.
  • CMOS low power operation: 300/250/220/180 mA at minimum cycle time.
  • Single 3.3 V ± 0.3 V power supply.
  • All inputs and outputs are TTL-compatible.
  • Fully static operation.
  • Industrial Temperature Option:.
  • 40° to 85°C.
  • 14 mm x 22 mm, 119-Bump, 1.27 mm Pitch Ball Grid Array package 512K x 16 8Mb Asynchronous SRAM Pin.

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Datasheet preview – GS78116B

Datasheet Details

Part number GS78116B
Manufacturer GSI Technology
File Size 407.55 KB
Description 512K x 16 8Mb Asynchronous SRAM
Datasheet download datasheet GS78116B Datasheet
Additional preview pages of the GS78116B datasheet.

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www.DataSheet4U.com GS78116B BGA Commercial Temp Industrial Temp Features • Fast access time: 10, 12, 15 ns • CMOS low power operation: 300/250/220/180 mA at minimum cycle time • Single 3.3 V ± 0.3 V power supply • All inputs and outputs are TTL-compatible • Fully static operation • Industrial Temperature Option: –40° to 85°C • 14 mm x 22 mm, 119-Bump, 1.27 mm Pitch Ball Grid Array package 512K x 16 8Mb Asynchronous SRAM Pin Descriptions Symbol A0 to A18 DQ1 to DQ16 CE WE OE VDD VSS NC 10, 12, 15 ns 3.3 V VDD Description Address input Data input/output Chip enable input Write enable input Output enable input +3.3 V power supply Ground No connect Description The GS78116 is a high speed CMOS static RAM organized as 524,288-words by 16-bits.
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