GS78116B - 512K x 16 8Mb Asynchronous SRAM

Product Overview

GSI Technology

Datasheet Details

Part number	GS78116B
Manufacturer	GSI Technology
File Size	407.55 KB
Description	512K x 16 8Mb Asynchronous SRAM
Datasheet	GS78116B Datasheet
Additional preview pages of the GS78116B datasheet.

Product details

Description

Symbol A0 to A18 DQ1 to DQ16 CE WE OE VDD VSS NC 10, 12, 15 ns 3.3 V VDD Description Address input Data input/output Chip enable input Write enable input Output enable input +3.3 V power supply Ground No connect Description The GS78116 is a high speed CMOS static RAM organized as 524,288-words by 16-bits.Static design eliminates the need for external clocks or timing strobes.The GS78116 operates on a single 3.3 V power supply and all inputs and outputs are TTLcompatible.The GS78116 is ava

Features

Fast access time: 10, 12, 15 ns.
CMOS low power operation: 300/250/220/180 mA at minimum cycle time.
Single 3.3 V ± 0.3 V power supply.
All inputs and outputs are TTL-compatible.
Fully static operation.
Industrial Temperature Option:.
40° to 85°C.
14 mm x 22 mm, 119-Bump, 1.27 mm Pitch Ball Grid Array package 512K x 16 8Mb Asynchronous SRAM Pin.

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Published: Jan 11, 2008 |