Datasheet Details
| Part number | GS74116ATP |
|---|---|
| Manufacturer | GSI Technology |
| File Size | 623.28 KB |
| Description | 256K X16 4Mb Asynchronous SRAM |
| Datasheet |
 GS74116ATP Datasheet
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General Description
Symbol
A0
A17 DQ1
DQ16 CE LB UB WE OE VDD VSS NC
8, 10, 12 ns 3.3 V VDD Center VDD and VSS
Description
Address input Data input/output Chip enable input Lower byte enable input (DQ1 to DQ8) Upper byte enable input (DQ9 to DQ16) Write enable input Output enable input +3.3 V power s
Key Features
- Fast access time: 8, 10, 12 ns.
- CMOS low power operation: 130/105/95 mA at minimum cycle time.
- Single 3.3 V power supply.
- All inputs and outputs are TTL-compatible.
- Byte control.
- Fully static operation.
- Industrial Temperature Option:.
- 40° to 85°C.
- Package line up J: 400 mil, 44-pin SOJ package GJ: RoHS-compliant 400 mil, 44-pin SOJ package TP: 400 mil, 44-pin TSOP Type II package GP: RoHS-compliant 400 mil, 44-pin T.