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GS4288C36L Datasheet 288mb Cio Low Latency Dram

Manufacturer: GSI Technology

Overview: GS4288C09/18/36L 144-Ball BGA mercial Temp Industrial Temp 32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM (LLDRAM) II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Pin- and function-compatible with Micron RLDRAM® II.
  • 533 MHz DDR operation (1.067Gb/s/pin data rate).
  • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency).
  • 8M x 36, 16M x 18, and 32M x 9 organizations available.
  • 8 internal banks for concurrent operation and maximum bandwidth.
  • Reduced cycle time (15 ns at 533 MHz).
  • Address Multiplexing (Nonmultiplexed address option available).
  • SRAM-type interface.
  • Programmable.

More Datasheets from GSI Technology

Part Number Description
GS4288C36GL 288Mb CIO Low Latency DRAM
GS4288C09GL 288Mb CIO Low Latency DRAM
GS4288C09L 288Mb CIO Low Latency DRAM
GS4288C18GL 288Mb CIO Low Latency DRAM
GS4288C18L 288Mb CIO Low Latency DRAM
GS4576C09GL 576Mb CIO Low Latency DRAM
GS4576C09GM 576Mb CIO Low Latency DRAM
GS4576C09L 576Mb CIO Low Latency DRAM
GS4576C18GL 576Mb CIO Low Latency DRAM
GS4576C18GM 576Mb CIO Low Latency DRAM

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