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GS4288C36L - 288Mb CIO Low Latency DRAM

Download the GS4288C36L datasheet PDF. This datasheet also covers the GS4288C09L variant, as both devices belong to the same 288mb cio low latency dram family and are provided as variant models within a single manufacturer datasheet.

Features

  • Pin- and function-compatible with Micron RLDRAM® II.
  • 533 MHz DDR operation (1.067Gb/s/pin data rate).
  • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency).
  • 8M x 36, 16M x 18, and 32M x 9 organizations available.
  • 8 internal banks for concurrent operation and maximum bandwidth.
  • Reduced cycle time (15 ns at 533 MHz).
  • Address Multiplexing (Nonmultiplexed address option available).
  • SRAM-type interface.
  • Programmable.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GS4288C09L-GSITechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number GS4288C36L
Manufacturer GSI Technology
File Size 2.05 MB
Description 288Mb CIO Low Latency DRAM
Datasheet download datasheet GS4288C36L Datasheet

Full PDF Text Transcription

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GS4288C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM (LLDRAM) II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features • Pin- and function-compatible with Micron RLDRAM® II • 533 MHz DDR operation (1.067Gb/s/pin data rate) • 38.
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