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SES5VN1006-2B Datasheet Preview

SES5VN1006-2B Datasheet

ESD Protector

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Ultra Small ESD Protector
Description
SES5VN1006-2B
The SES5VN1006-2B ESD protector is designed to replace multilayer
varistors (MLVs) in portable applications such as cell phones,
notebook computers, and PDAs. They feature large cross-sectional
area junctions for conducting high transient currents, offer desirable
electrical characteristics for board level protection, such as fast
response time, lower operating voltage, lower clamping voltage and no
device degradation when compared to MLVs. The SES5VN1006-2B
protects sensitive semiconductor components from damage or upset
due to electrostatic discharge (ESD) and other voltage induced
transient events. The SES5VN1006-2B is available in a DFN-2
package with working voltages of 5 volt. It gives designer the flexibility
to protect one bidirectional line in applications where arrays are not
practical. Additionally, it may be sprinkledaround the board in
applications where board space is at a premium. It may be used to
meet the ESD immunity requirements of IEC 61000-4-2, Level 4
(±15kV air, ±8kV contact discharge)
Feature
„ 120 Watts peak pulse power (tp = 8/20μs)
„ Transient protection for data lines to
IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
„ Small package for use in portable electronics
„ Suitable replacement for MLVs in ESD protection applications
„ Protect one I/O or power line
www.D„ataShLeoewt4cUla.cmomping voltage
„ Stand off voltages: 5V
„ Low leakage current
„ Solid-state silicon-avalanche technology
„ Small Body Outline Dimensions: 1.0mm×0.6mm×0.5mm
„ Equivalent to 0402 package
Applications
„ Cell Phone Handsets and Accessories
„ Personal Digital Assistants (PDAs)
„ Notebooks, Desktops, and Servers
„ Portable Instrumentation
„ Cordless Phones
„ Digital Cameras
„ Peripherals
„ MP3 Players
Ultra Small ESD Protector
1
SES Series
ROHS
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GOOD-ARK Electronics

SES5VN1006-2B Datasheet Preview

SES5VN1006-2B Datasheet

ESD Protector

No Preview Available !

ESD Protector
SEP2V8-4ULVC
Electrical characteristics @25(unless otherwise specified)
SE**** Series
ROHS
Parameter
Working Voltage
Breakdown voltage
Reverse Leakage Current
Resistance
Junction Capacitance
Symbol
VRWM
VBR
IR
Rd
Cj
Conditions
It =1mA
VRWM =3V T=25
VR=0V f = 1MHz
Absolute maximum rating @25
Min.
6.0
Typ.
6.8
0.65
22
Max.
5
8.0
0.1
Units
V
V
μA
Ω
pF
Rating
Peak Pulse Power ( tP = 8/20μS )
Repetitive peak pulse current ( tP = 8/20μS )
Junction temperature
Lead Soldering Temperature
Operating Temperature
Storage Temperature
Symbol
Ppk
Ipp
Tj
TL
TJ
TSTG
Value
140
9
125
260 (10 sec)
-40 to +125
-55 to +150
Typical Characteristics
Product dimension and foot print
www.DataSheet4U.com
Units
W
A
Ultra Small ESD Protector
2
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Part Number SES5VN1006-2B
Description ESD Protector
Maker GOOD-ARK Electronics
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SES5VN1006-2B Datasheet PDF






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