SES5VN1006-2B Datasheet | Good-Ark Semiconductor

Description The SES5VN1006-2B ESD protector is designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook puters, and PDA’s. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical characteristics for board level protection, such as fast response time, lower operating voltage, lower clamping voltage and no device degradation when pared to MLVs. The SES5VN1006-2B protects sensitive semiconductor ponents from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. The SES5VN1006-2B is available in a DFN-2 package with working voltages of 5 volt. It gives designer the flexibility to protect one bidirectional line in applications where arrays are not practical. Additionally, it may be “sprinkled” around the board in applications where board space is at a premium. It may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15k V air, ±8k V contact discharge) Feature - - - - - - - - - - 120 Watts peak pulse power (tp = 8/20μs) Transient protection for data lines to IEC 61000-4-2 (ESD) ±15k V (air), ±8k V (contact) Small package for use in portable electronics Suitable replacement for MLVs in ESD protection applications Protect one I/O or power line Stand off voltages: 5V Low leakage current Solid-state silicon-avalanche technology Small Body Outline Dimensions: 1.0mm×0.6mm×0.5mm Equivalent to 0402 package .. - Low clamping voltage Applications - - - - - - - - Cell Phone Handsets and Accessories Personal Digital Assistants (PDA’s) Notebooks, Desktops, and Servers Portable Instrumentation Cordless Phones Digital Cameras Peripherals MP3 Players Ultra Small ESD Protector .goodark. SE- - - - Series ESD Protector SEP2V8-4ULVC ROHS Electrical characteristics @25℃(unless otherwise specified) Parameter Working Voltage Breakdown voltage Reverse Leakage Current Resistance Junction Capacitance Symbol VRWM VBR IR Rd...