TO - 220
* Advanced Process Technology
* Special designed for PWM, load switching and general purpose applications
* Ultra low on-resistance with low gate c.

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery
* 175℃ operating t.

These N-Channel enhancement mode power field effect transistors are produced using our proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts