GS2005EL Datasheet | Good-Ark Semiconductor

Features - Low profile, small footprint - Low forward voltage - Forward current: 0.5A - Reverse voltage: 20V - MSL: Level 1 Applications - Ultra high-speed switching - Voltage clamping - Protection circuits - Low voltage rectification - High efficiency DC-to-DC conversion - Low power consumption applications GS2005EL Schottky Barrier Diode Package: DFN1006-2L Schematic Diagram Typical Applications General purpose use in ac-to-dc bridge full wave rectification for Switching Power Supply, Home Appliances, Office Equipment and Industrial Automation applications . Description Planar Maximum Efficiency General Application (MEGA) schottky barrier diode with an integrated guard ring for stress protection encapsulated in a DFN1006-2 small package. Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Continuous Reverse Voltage Repetitive Peak Forward Current Continuous Forward Current Non-repetitive Peak Forward Current Junction Temperature Operating Ambient Temperature Storage Temperature Symbols VRRM IFRM IF IFSM TJ TAMB TSTG Conditions tp≤1ms; δ≤0.25 t=8ms square wave Min Max Units 20 V 2.5 A 0.5 A 3.0 A 150 °C -65 +150 °C -65 +150 °C Notes: For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV) rating will be available on request. 1/3 Electrical Characteristics (TA=25°C unless otherwise specified) Parameter Continuous Forward Voltage Continuous Reverse Current Diode Capacitance Pulse test:tp≤300μs;...