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GT700P08 - P-Channel Enhancement Mode Power MOSFET

Download the GT700P08 datasheet PDF. This datasheet also covers the GT700P08D3 variant, as both devices belong to the same p-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l 100% Avalanche Tested l RoHS Compliant -80V -16A < 75mΩ Schematic diagram.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GT700P08D3-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number GT700P08
Manufacturer GOFORD
File Size 647.62 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GT700P08 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GT700P08D3 P-Channel Enhancement Mode Power MOSFET Description The GT700P08D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
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