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2300F - N-Channel MOSFET

Description

The 2300F designed by the trench processing techniques to achieve extremely low on-resistance.

And fast switching speed and improved transfer effective .

Features

  • combine to make this design an extremely efficient and reliable device for variety of DC-DC.

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Datasheet Details

Part number 2300F
Manufacturer GOFORD
File Size 2.17 MB
Description N-Channel MOSFET
Datasheet download datasheet 2300F Datasheet

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GOFORD 2300F Description The 2300F designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features combine to make this design an extremely efficient and reliable device for variety of DC-DC applications. Features ♦ VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @2.