SBL1030 Datasheet | Galaxy Microelectronics

FEATURES z Metal-Semiconductor Junction with Guardring. z Epitaxial Construction. Pb z Lead-free Low Forward Voltage Drop,Low Switching Losses. z High Surge Capability. z For Use in Low Voltage,High Frequency Inverters Free Wheeling,and Polarity Protection Applications. z The Plastic Material Carries U/L Recognition 94V-0. TO-220AC MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter SBL SBL SBL SBL SBL SBL SBL 1030 1035 1040 1045 1050 1060 1080 VRRM Recurrent Peak Reverse Voltage 30 35 40 45 50 60 80 SBL 10100 Unit 100 V VRMS RMS Reverse Voltage 21 25 28 32 35 42 56 70 VDC DC Blocking Voltage 30 35 40 45 50 60 80 100 V IF(AV) IFSM Average Forward Rectified Current@TA=100℃ Forward Surge Current 8.3ms Single Half Sine-wave Superimosed on Rated Load 10 250 RθJC Thermal Resistance (Note1) 5.0 ℃/W Tj,Tstg Operating Junction and...