PBSS5160T Datasheet | Galaxy Microelectronics

Production specification PNP Low VCEsat(BISS) Transistor Features z Low collector-emitter saturation voltage VCEsat z High collector current capability IC and ICM z High efficiency, reduces heat generation z Reduces printed-circuit board area required Pb Lead-free APPLICATIONS z Major application segments z Power management z Peripheral driver ORDERING INFORMATION Type No. Marking U6 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous ICM peak collector current (t = 1 ms or limited by Tj(max)) IB base current (DC) IBM peak base current (tp ≤ 300 ms; δ≤ 0.02) Value -80 -60 -5 -0.9（note 1） -1（note 2） -2 -300 -1 Units V V V A A m A A PC Tstg，Tamb Collector Dissipation Tamb ≤ 25 °C; note 1 Tamb ≤ 25 °C; note 2 Tamb ≤ 25 °C; notes 1 and 3 Storage and operating...