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GME

PBSS5160T Datasheet Preview

PBSS5160T Datasheet

PNP Transistor

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Production specification
PNP Low VCEsat(BISS) Transistor
FEATURES
z Low collector-emitter saturation voltage VCEsat
z High collector current capability IC and ICM
z High efficiency, reduces heat generation
z Reduces printed-circuit board area required
Pb
Lead-free
PBSS5160T
APPLICATIONS
z Major application segments
z Power management
z Peripheral driver
ORDERING INFORMATION
Type No.
Marking
PBSS5160T
U6
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
VCBO
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current -Continuous
ICM peak collector current (t = 1 ms or limited by Tj(max))
IB base current (DC)
IBM peak base current (tp 300 ms; δ0.02)
Value
-80
-60
-5
-0.9note 1
-1note 2
-2
-300
-1
Units
V
V
V
A
A
mA
A
PC
TstgTamb
Collector Dissipation Tamb 25 °C; note 1
Tamb 25 °C; note 2
Tamb 25 °C; notes 1 and 3
Storage and operating ambient temperature
270
400
1.25
-65 to +150
mW
mW
W
Tj Junction temperature
150
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, standard
C282
Rev.A
www.gmicroelec.com
1




GME

PBSS5160T Datasheet Preview

PBSS5160T Datasheet

PNP Transistor

No Preview Available !

Production specification
PNP Low VCEsat(BISS) Transistor
PBSS5160T
footprint.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm2 collector
mounting pad.
3. Operated under pulsed conditions: duty cycle δ 20%, pulse width tp 10 ms.
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=100μA,IE=0
-80
V
Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0
-60
V
Emitter-base breakdown voltage
Collector cut-off current
collector-emitter cut-off current
Emitter cut-off current
V(BR)EBO IE=100μA,IC=0
ICBO
VCB=-60V,IE=0
ICES VCE=-60V,IE=0
IEBO VEB=-5V,IC=0
-5
V
-0.1 μA
-0.1 μA
-0.1 μA
VCE=-5V,IC=-1mA
200 350
DC current gain
hFE
VCE=-5V,IC=-500mA
150 250
Collector-emitter saturation voltage VCE(sat)
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector capacitance
VBE(sat)
VBE(on)
fT
CC
VCE=-5V,IC=-1A
IC=-100mA, IB= -1mA
IC=-500mA, IB= -50mA
IC=-1A, IB= -100mA
IC=-1A, IB= -50mA
IC=-1A,VCE=-5V
VCE=-10V, IC= -50mA
f=100MHz
VCB=-10V,f=1MHz
100 160
-110
-120
-220
-160
-175
-330
mV
-0.95 -1.1 V
-0.82 -0.9 V
150 220
MHz
9 15 pF
C282
Rev.A
www.gmicroelec.com
2


Part Number PBSS5160T
Description PNP Transistor
Maker GME
PDF Download

PBSS5160T Datasheet PDF






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