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PBSS4160T - NPN Low VCEsat Transistor

Features

  • z Low collector-emitter saturation voltage VCEsat Pb z High collector current capability IC and ICM Lead-free z High efficiency, reduces heat generation z Reduces printed-circuit board area required PBSS4160T.

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Other Datasheets by Galaxy Microelectronics

Part Number Description
PBSS5160T PNP Transistor

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Production specification NPN Low VCEsat Transistor FEATURES z Low collector-emitter saturation voltage VCEsat Pb z High collector current capability IC and ICM Lead-free z High efficiency, reduces heat generation z Reduces printed-circuit board area required PBSS4160T APPLICATIONS z Major application segments z Power management z Peripheral driver ORDERING INFORMATION Type No. Marking PBSS4160T U5 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous ICM peak collector current (t = 1 ms or limited by Tj(max)) IB base current (DC) IBM peak base current (tp ≤ 300 ms; δ≤ 0.02) Value 80 60 5 0.
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