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MMSTA56 - PNP Silicon Epitaxial Planar Transistor

Download the MMSTA56 datasheet PDF. This datasheet also covers the MMSTA55 variant, as both devices belong to the same pnp silicon epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Power dissipation. (PC=200mW).
  • Epitaxial planar die construction.
  • Also available in lead free version. Pb Lead-free MMSTA55/MMSTA56.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MMSTA55-GME.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Production specification PNP Silicon Epitaxial Planar Transistor FEATURES  Power dissipation.(PC=200mW).  Epitaxial planar die construction.  Also available in lead free version. Pb Lead-free MMSTA55/MMSTA56 APPLICATIONS  General purpose application and switching application. ORDERING INFORMATION Type No. Marking MMSTA55 MMSTA56 K2H K2G SOT-323 Package Code SOT-323 SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage MMSTA55 MMSTA56 MMSTA55 MMSTA56 MMSTA55 MMSTA56 -60 -80 -60 -80 -4 IC Collector Current -Continuous -500 PC Collector Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ F063 Rev.A www.gmesemi.