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MMSTA55 - PNP Silicon Epitaxial Planar Transistor

Key Features

  • Power dissipation. (PC=200mW).
  • Epitaxial planar die construction.
  • Also available in lead free version. Pb Lead-free MMSTA55/MMSTA56.

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Production specification PNP Silicon Epitaxial Planar Transistor FEATURES  Power dissipation.(PC=200mW).  Epitaxial planar die construction.  Also available in lead free version. Pb Lead-free MMSTA55/MMSTA56 APPLICATIONS  General purpose application and switching application. ORDERING INFORMATION Type No. Marking MMSTA55 MMSTA56 K2H K2G SOT-323 Package Code SOT-323 SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage MMSTA55 MMSTA56 MMSTA55 MMSTA56 MMSTA55 MMSTA56 -60 -80 -60 -80 -4 IC Collector Current -Continuous -500 PC Collector Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ F063 Rev.A www.gmesemi.