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MMST2907A - PNP Silicon Epitaxial Planar Transistor

Features

  • Power dissipation. (PC=200mW) Pb.
  • Epitaxial planar die construction. Lead-free.
  • Complementary NPN type MMST2222A.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PNP Silicon Epitaxial Planar Transistor FEATURES  Power dissipation.(PC=200mW) Pb  Epitaxial planar die construction. Lead-free  Complementary NPN type MMST2222A. APPLICATIONS  General purpose application. Production specification MMST2907A ORDERING INFORMATION Type No. Marking MMST2907A K3F SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Voltage -60 VEBO Emitter-Base Voltage -5 IC Collector Current -Continuous -600 PC Collector Dissipation 200 RθJA Thermal Resistance,Junction to Ambient 625 Units V V V mA mW ℃/W Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ F050 Rev.A www.gmesemi.
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