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MMBTH10 Datasheet Preview

MMBTH10 Datasheet

Silicon Epitaxial Planar Transistor

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Silicon Epitaxial Planar Transistor
FEATURES
z High transition frequency.
z Power dissipation.(PC=350mW).
Pb
Lead-free
APPLICATIONS
z VHF/UHF Transistor.
Production specification
MMBTH10
ORDERING INFORMATION
Type No.
Marking
MMBTH10
3EM
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
30
VCEO
Collector-Emitter Voltage
25
VEBO
Emitter-Base Voltage
3
IC Collector Current -Continuous
50
PC Collector Dissipation
350
Tj,Tstg
Junction and Storage Temperature
-55 to +150
Units
V
V
V
mA
mW
C125
Rev.A
www.gmicroelec.com
1




GME

MMBTH10 Datasheet Preview

MMBTH10 Datasheet

Silicon Epitaxial Planar Transistor

No Preview Available !

Production specification
Silicon Epitaxial Planar Transistor
MMBTH10
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=100μA,IE=0
30
V
Collector-emitter breakdown voltage
V(BR)CEO IC=1mA,IB=0
25 V
Emitter-base breakdown voltage
V(BR)EBO IE=10μA,IC=0
3
V
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter on voltage
Transition frequency
ICBO
IEBO
hFE
VCE(sat)
VBE(on)
fT
VCB=25V,IE=0
VEB=2V,IC=0
VCE=10V,IC=4.0mA
IC=4.0mA, IB= 0.4mA
IC=4.0mA, VCE=10V
VCE=10V, IC= 4.0mA
f=100MHz
0.1 μA
0.1 μA
60
0.5 V
0.95 V
650 MHz
Collector-Base Capacitance
Ccb VCB=10V,IE=0,f=1.0MHz
0.7 pF
Collector-Base Feedback Capacitance Crb
Collector Base Time Constant
rb'CC
VCB=10V,IE=0,f=1.0MHz
IC=4mA,VCB=10V
f=31.8MHz
0.35
0.65
9.0
pF
pS
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
C125
Rev.A
www.gmicroelec.com
2


Part Number MMBTH10
Description Silicon Epitaxial Planar Transistor
Maker GME
Total Page 4 Pages
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