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MMBTA05 - NPN General Purpose Transistor

Key Features

  • High breakdown voltage.
  • Complementary PNP type available Pb Lead-free (MMBTA55/MMBTA56).
  • Low collector-emitter saturation voltage.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Production specification NPN General Purpose Transistor FEATURES  High breakdown voltage.  Complementary PNP type available Pb Lead-free (MMBTA55/MMBTA56).  Low collector-emitter saturation voltage. APPLICATIONS  Ideal for medium power amplification and switching. ORDERING INFORMATION Type No. Marking MMBTA05 MMBTA06 1H 1GM MMBTA05/MMBTA06 SOT-23 Package Code SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VCBO VCEO collector-base voltage collector-emitter voltage MMBTA05 MMBTA06 MMBTA05 MMBTA06 VEBO emitter-base voltage IC collector current (DC) PC Collector dissipation RθJA Thermal Resistance, Junction to Ambient Tj ,Tstg junction and storage temperature Value 60 80 60 80 4 0.