MMBT5089 Datasheet | Galaxy Microelectronics

FEATURES z Excellent HFE Linearity. z Power dissipation.(PC=0.2W). Pb Lead-free MMBT5088/5089 APPLICATIONS z This device is designed for low noise,high gain,general purpose amplifier applications at collector currents from 1μA to 50m A. ORDERING INFORMATION Type No. Marking MMBT5088 MMBT5089 1Q 1R SOT-23 Package Code SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage MMBT5088 35 MMBT5089 30 VCEO Collector-Emitter Voltage MMBT5088 30 MMBT5089 25 VEBO IC PC Emitter-Base Voltage Collector Current -Continuous Collector Dissipation 4.5 100 350 RθJA Tj,Tstg Thermal Resistance,Junction to Ambient Junction and Storage Temperature 357 -55 to +150 Units V V V m A m W ℃/W ℃ C158 Rev.A .gmicroelec. 1 Production specification Silicon Epitaxial Planar Transistor MMBT5088/5089 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise...