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MMBT4401 - NPN Silicon Epitaxial Planar Transistor

Features

  • Epitaxial planar die construction.
  • Complementary PNP type available: Pb Lead-free MMBT4403.
  • Ideal for medium power amplification and switching.
  • MSL 1.

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Production specification NPN Silicon Epitaxial Planar Transistor FEATURES  Epitaxial planar die construction.  Complementary PNP type available: Pb Lead-free MMBT4403.  Ideal for medium power amplification and switching.  MSL 1 APPLICATIONS  General purpose application, switching application. MMBT4401 SOT-23 ORDERING INFORMATION Type No. Marking MMBT4401 2X Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 40 VEBO Emitter-Base Voltage 6 IC Collector Current -Continuous 600 PC Collector Power Dissipation 350 RθJA Thermal Resistance,Junction to Ambient 357 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃/W ℃ C073 Rev.
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