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MMBD352 - Dual Hot Carrier Mixer Diodes

Features

  • z Very low capacitance.
  • Less than 1.0pF@zero V. Pb Lead-free z Low forward voltage.
  • IF=10mA. z Power dissipation Pd=300mW z Pb-Free package is available.

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Datasheet preview – MMBD352

Datasheet Details

Part number MMBD352
Manufacturer Galaxy Microelectronics
File Size 141.77 KB
Description Dual Hot Carrier Mixer Diodes
Datasheet download datasheet MMBD352 Datasheet
Additional preview pages of the MMBD352 datasheet.

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Full PDF Text Transcription

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Dual Hot Carrier Mixer Diodes FEATURES z Very low capacitance— Less than 1.0pF@zero V. Pb Lead-free z Low forward voltage—IF=10mA. z Power dissipation Pd=300mW z Pb-Free package is available. APPLICATIONS z Designed primarily for UHF mixer applications. Production specification MMBD352/353/354/355 MMBD352 MMBD353 MMBD354 MMBD355 ORDERING INFORMATION Type No. Marking MMBD352 MMBD353 MMBD354 MMBD355 M5G M4F M6H MJ1 SOT-23 Package Code SOT-23 SOT-23 SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Continuous reverse voltage VR Power Dissipation Pd Thermal Resistance,Junction-to-Ambient RθJA Junction and storage temperature TJ,TSTG Limits 7.0 300 417 -55 to +150 Unit V mW ℃/W ℃ C138 Rev.A www.gmicroelec.
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