MBRF2045CT Datasheet | Galaxy Microelectronics

FEATURES z High surge capacity. z For use in low voltage,high frequency Pb Lead-free Inverters,free wheeling,and polarity protect- tion applications. z Metal silicon junction,majority carrier conduction. z High current capacity,lowforward voltage drop. z Guard ring for over voltage protection. ITO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF Symbol Parameter 2030 2035 2040 2045 2050 2060 2080 20100 CT CT CT CT CT CT CT CT Recurrent Peak Reverse VRRM Voltage 30 35 40 45 50 60 80 100 Unit V VRMS RMS Voltage 21 25 28 32 35 42 56 70 V VDC DC Blocking Voltage 30 35 40 45 50 60 80 100 V IF(AV) IFSM RθJC Tj Tstg Average Forward Total Device Rectified Current @TA= 100°C Peak Forward Surge Current 8.3ms Single Half Sine-wave Superimposed on rated load Thermal Resistance (Note1) Operating Junction and Storage...