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KTD1624 Datasheet Preview

KTD1624 Datasheet

NPN Silicon Epitaxial Planar Transistor

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NPN Silicon Epitaxial Planar Transistor
FEATURES
Pb
Adoption of MBIT processes.
Lead-free
Low collector-to-emitter saturation voltage.
Fast switching speed.
Large current capacity and wide ASO.
Complementary: KTB1124.
Production specification
KTD1624
ORDERING INFORMATION
Type No.
Marking
KTD1624
YA/YB/YC
SOT-89
Package Code
SOT-89
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
60
VCEO
Collector-Emitter Voltage
50
VEBO
Emitter-Base Voltage
6
IC Collector Current -Continuous
3
ICP
Collector Current –Continuous(Pulse)
6
PC Collector Dissipation
500
Tj,Tstg
Junction and Storage Temperature
-55 to +150
Units
V
V
V
A
A
mW
E014
Rev.A
www.gmicroelec.com
1




GME

KTD1624 Datasheet Preview

KTD1624 Datasheet

NPN Silicon Epitaxial Planar Transistor

No Preview Available !

Production specification
NPN Silicon Epitaxial Planar Transistor
KTD1624
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Collector cut-off current
Emitter cut-off current
Symbol
ICBO
IEBO
Test conditions
VCB=40V,IE=0
VEB=4V,IC=0
MIN TYP MAX UNIT
1 μA
1 μA
DC current gain
hFE
Collector-emitter saturation voltage
Base-emitter voltage
VCE(sat)
VBE
VCE=2V,IC=100mA
VCE=2V,IC=3A
IC=2A, IB= 100mA
VCE=2V, IB= 100mA
100 400
35
0.19 0.5 V
0.94 1.2 V
Transition frequency
fT VCE=10V, IC= 50mA
150 MHz
Collector output capacitance
Cob VCB=10V,IE=0,f=1MHz
25
pF
CLASSIFICATION OF hFE(1)
Rank
AB C
Range
100-200
140-280
200-400
MARKING
YA YB YC
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
E014
Rev.A
www.gmicroelec.com
2


Part Number KTD1624
Description NPN Silicon Epitaxial Planar Transistor
Maker GME
Total Page 5 Pages
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