C009T Datasheet | Galaxy Microelectronics

Production specification N-Channel Enhancement Mode Field Effect Transistor BL2300 Features z VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A Pb z VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A Lead-free z VDS=20V,,RDS(ON)=75m @VGS=1.8V,ID=1.0A APPLICATIONS z Power Management in Note book. z Portable Equipment. z Battery Powered System. z Load Switch. z DSC. ORDERING INFORMATION Type No. Marking BL2300 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage VGSS Gate -Source voltage ±10 ID Maximum Drain current TA=25℃ IDM PD RθJA TJ,Tstg Pulsed Drain current Power Dissipation Thermal resistance,Junction-to-Ambient Operating Junction and Storage Temperature 15 1.25 100 -55 to 150 Units V V A A W ℃/W ℃ C229 Rev.A .gmicroelec. 1 Production specification N-Channel Enhancement Mode Field Effect Transistor BL2300 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise...