BL5N65F Datasheet | Galaxy Microelectronics

FEATURES - RDS(ON) =2.4Ω@ VGS = 10V - Ultra low gate charge ( typical 15 n C ) Pb Lead-free - Low reverse transfer Capacitance ( CRSS = typical 6.5 p F ) - Fast switching capability - Avalanche energy specified - Improved dv/dt capability, high ruggedness Production specification MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS Gate -Source voltage IDM EAS EAR dv/dt Continuous Drain Current Pulsed Drain Current Avalanche Energy Single Pulsed Repetitive Peak Diode Recovery dv/dt PD Power Dissipation RθJA Thermal resistance,Junction-to-Ambient θJA Junction to Ambient θJC Junction to Case TJ Junction Temperature TOPR, Tstg Operating and Storage Temperature ITO-220AB Value 650 ±30 5 20 210 10 4.5 36 62.5 62.5 +150 -55 to +150 Units V V A A m J V/ns W ℃/W ℃/W ℃/W ℃ ℃ S071 Rev.A .gmesemi. Production specification 5A,650V...