BL5N65F - N-Channel Power Mosfet

Galaxy Microelectronics

Key Features

RDS(ON) =2.4Ω@ VGS = 10V.
Ultra low gate charge ( typical 15 nC ) Pb Lead-free.
Low reverse transfer Capacitance ( CRSS = typical 6.5 pF ).
Fast switching capability.
Avalanche energy specified.
Improved dv/dt capability, high ruggedness Production specification BL5N65F.

BL5N65F n-channel power mosfet by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	BL5N65F
Manufacturer	Galaxy Microelectronics
File Size	281.79 KB
Description	N-Channel Power Mosfet
Datasheet	BL5N65F Datasheet

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Full PDF Text Transcription (Reference)

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5A,650V N-Channel Power Mosfet FEATURES  RDS(ON) =2.4Ω@ VGS = 10V  Ultra low gate charge ( typical 15 nC ) Pb Lead-free  Low reverse transfer Capacitance ( CRSS = typical 6.