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2SC4180 - Silicon Epitaxial Planar Transistor

Key Features

  • Excellent hFE linearity.
  • High voltage and current.
  • Power dissipation PC=150mW.
  • Small package. Pb Lead-free Production specification 2SC4180.

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Full PDF Text Transcription for 2SC4180 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SC4180. For precise diagrams, tables, and layout, please refer to the original PDF.

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Silicon Epitaxial Planar Transistor FEATURES  Excellent hFE linearity.  High voltage and current.  Power dissipation PC=150mW.  Small package. Pb Lead-free Production specification 2SC4180 APPLICATIONS  Audio frequency general purpose amplifier. ORDERING INFORMATION Type No. Marking 2SC4180 D15/D16/D17/D18 SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 120 VCEO Collector-Emitter Voltage 120 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 50 PC Collector Dissipation 150 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ F040 Rev.A www.gmesemi.